PART |
Description |
Maker |
IRFIZ34N IRFIZ34NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Lsolated Base Power HEX-pak Assembly Half Bridge Configuration Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)
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IRF[International Rectifier]
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IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STR |
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条) Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
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International Rectifier, Corp.
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IRFIZ46N |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V Rds(on)=0.020ohm Id=33A) Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=33A) 功率MOSFET(减振钢板基本\u003d 55V的,的Rds(on)\u003d 0.020ohm,身份证\u003d 33A条)
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IRF[International Rectifier] International Rectifier, Corp.
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IRFI1010N IRFI1010 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A) HEXFET? Power MOSFET Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
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IRF[International Rectifier]
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IRF5N4905 |
-55V Single P-Channel Hi-Rel MOSFET in a SMD-1 package POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.024ohm, Id=-55A*) SURFACE MOUNT (SMD-1) 55V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.024ohm/ Id=-55A*)
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IRF[International Rectifier]
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IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings THRU-HOLE (TO-254AA) 55V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
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International Rectifier
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IRFR9024N IRFU9024N IRFRU9024N IRFR9024NTR IRFR902 |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) HEXFET? Power MOSFET Power MOSFET(Vdss=-55V Rds(on)=0.175ohm Id=-11A) P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) P通道表面贴装HEXFET功率MOSFET的性(P沟道表贴型的HEXFET功率马鞍山场效应管)
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http:// IRF[International Rectifier] International Rectifier, Corp.
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IRFR2905ZPBF IRFU2905ZPBF |
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A ) HEXFET垄莽 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m楼? , ID = 42A ) HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mヘ , ID = 42A )
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International Rectifier
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SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03 |
OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL
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INFINEON[Infineon Technologies AG]
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SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL OptiMOS Power-Transistor 的OptiMOS功率晶体 80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
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INFINEON[Infineon Technologies AG]
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